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Technically, subthreshold can be defined as
(QS is the channel charge), but this definition is not much help practically. Instead subthreshold conditions are best defined by the biasing current range. The correct biasing currents those over which ID is exponentially related to VGS. For instance, in a 0.5μ process an ID in the 100fA - 100 nA usually places a transistor in the subthreshold region.
To find ID for your process, plot VGS vs. log(ID) and identify the voltage and current range over which the curve is linear. Remember also the transistor dimensions play a part in this too.
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